High transconductance and velocity overshoot in NMOS devices at the 0.1 μ gate-length level
http://dx.doi.org/10.1109/TIE.2010.2077615
CMOS scaling into the 21st century: 0.1 µm and beyond
http://dx.doi.org/10.1147/rd.391.0245
Drain current enhancement due to velocity overshoot effects and its analytic modeling
http://dx.doi.org/10.1109/16.543021
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