Báo điện tử IEEE

**tocal09** · 17-04-2012, 09:20 PM

Nhờ bạn lấy hộ những bài này:

A physically based mobility model for MOSFET numerical simulation
http://dx.doi.org/10.1109/T-ED.1987.22924
A physically based mobility model for numerical simulation of nonplanar devices
http://dx.doi.org/10.1109/43.9186
Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects
http://dx.doi.org/10.1109/43.918208
Theory of the Monte Carlo method for semiconductor device simulation
http://dx.doi.org/10.1109/16.870569
Cảm ơn bạn.

17-04-2012, 09:20 PM	#11
tocal09 Đệ tử 1 túi Tham gia ngày: Aug 2005 Bài gửi: 13 :	Nhờ bạn lấy hộ những bài này: A physically based mobility model for MOSFET numerical simulation http://dx.doi.org/10.1109/T-ED.1987.22924 A physically based mobility model for numerical simulation of nonplanar devices http://dx.doi.org/10.1109/43.9186 Analytical charge-control and I-V model for submicrometer and deep-submicrometer MOSFETs fully comprising quantum mechanical effects http://dx.doi.org/10.1109/43.918208 Theory of the Monte Carlo method for semiconductor device simulation http://dx.doi.org/10.1109/16.870569 Cảm ơn bạn.