Báo điện tử IEEE

**tocal09** · 24-03-2012, 06:41 PM

Nhờ bạn tìm hộ bài này:
1- A new and improved physics-based model for MOS transistors
http://dx.doi.org/10.1109/TED.2005.859623
2- Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain
http://dx.doi.org/10.1109/TED.2005.859593
3- Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS
http://dx.doi.org/10.1109/TED.2005.859566
4-A mobility model for carriers in the MOS inversion layer
http://dx.doi.org/10.1109/T-ED.1983.21185
Cảm ơn bạn

24-03-2012, 06:41 PM	#11
tocal09 Đệ tử 1 túi Tham gia ngày: Aug 2005 Bài gửi: 13 :	Nhờ bạn tìm hộ bài này: 1- A new and improved physics-based model for MOS transistors http://dx.doi.org/10.1109/TED.2005.859623 2- Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain http://dx.doi.org/10.1109/TED.2005.859593 3- Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS http://dx.doi.org/10.1109/TED.2005.859566 4-A mobility model for carriers in the MOS inversion layer http://dx.doi.org/10.1109/T-ED.1983.21185 Cảm ơn bạn thay đổi nội dung bởi: tocal09, 24-03-2012 lúc 08:30 PM.